Irf1010 datasheet

Author: hspp

August undefined, 2024

WebOct 14, 2024 · View and download IRF1010 datasheet pdf (12 Pages), IRF1010 Array, TO-220AB N-CH 60V 84A. IRF1010 datasheet pdf download. WebCree, Inc. LED, OVAL, RED, 740MCD, 624NM; LED Color:Red; LED Mounting:SMD; Bulb Size:-; Forward Current If:20mA; Forward Voltage:2.1V; Wavelength Typ:624nm; Luminous …

PD - 94966A IRF1010NPbF - Infineon

WebIRF120 Product details Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs WebNo. Part Name Description Manufacturer; 1: AU IRF1010 EZ: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package: International Rectifier: 2: AU IRF1010 EZL: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a … on trend flowers

Distributed by: www.Jameco.com 1-800-831-4242

WebTitle: page1.EPS Created Date: 7/8/1997 2:28:19 PM WebHEXFET® Power MOSFET D S G Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free VDSS 100V RDS(on) typ. 3.5m max 4.2m ID (Silicon Limited) 192A TO-220AB IRF100B201 S Web2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TLimited by TJmax, starting TJ = 25°C, L = 0.077mH, RG = 25Ω, IAS = 51A, VGS =10V. Part not recommended for use above this value. on trend flooring 2021

Irf1010 datasheet

WebIRFP460 Product details GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. WebDownload schematic symbols, PCB footprints, 3D Models, pinout & datasheet for the IRF1010 by Infineon Technologies. N-Channel 55 V 85A (Tc) 180W (Tc) Through Hole TO-220AB. Exports to OrCAD, Allegro, Altium, PADS, Eagle, KiCad, Diptrace & Pulsonix. ... Check out these parts with similar attributes as the IRF1010 and other ones you might like

Did you know?

Web8 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2010 Data and specifications subject to change without notice. WebDetailed Specifications:- Related Documents:- IRF1010 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product. IRF1010 MOSFET - 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package Product Code: EC-2183 Availability: 361 Rs.52.00 (Excluding 18% GST) Add to Cart Write a review

WebIRF740 www.vishay.com Vishay Siliconix S21-0853-Rev. D, 16-Aug-2024 4 Document Number: 91054 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. WebIRF1010 9B 1M A Part Marking Information TO-220AB Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) INTERNATIONAL PART NUMBER RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK 9246 IRF1010 9B 1M A LEAD …

WebAU IRF1010 EZS: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package: International Rectifier: 4: AU IRF1010 Z: Automotive Q101 55V Single N … WebIRF1010E Product details • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

WebMar 29, 2024 · IRF1010 Mfr.: Infineon Technologies Customer #: Description: Infineon Lifecycle: Restricted Availability: This part number is not currently available from Mouser. …

WebMay 25, 2024 · IRF1010 Key Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Type Designator: IRF1010 Type of Transistor: MOSFET Type of Control Channel: N -Channel IRF1010 Specification IRF1010 Equivalent/Alternative on trend giftsWeb2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– … on trend flooringEXAMPLE: THIS IS AN IRF1010 Note: "P" in assembly line position indicates "Lead - Free" IN THE ASSEMBLY LINE "C" ASSEMBLED ON WW 19, 2000 Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ iot based baby monitoring systemWebNell High Power Products. N-Channel Power MOSFET. DESCRIPTION. (84A, 60Volts) The Nell IRF1010 is a three-terminal silicon. device with current conduction capability. of 84A, … on trend eyewearWebVishay Intertechnology on trend groupWebFind IRF1010 on Octopart: the fastest source for datasheets, pricing, specs and availability. on trend floral maxiWeb2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C RDS(on) VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 33 ––– … on trend glasses frames